Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2007-05-22
2007-05-22
Gupta, Yogendra N. (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S105000, C117S109000, C117S906000, C117S951000
Reexamination Certificate
active
10628188
ABSTRACT:
The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing an ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.
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Carter, Jr. Calvin H.
Fechko, Jr. George J.
Hobgood Hudson M.
Jenny Jason R.
Tsvetkov Valeri F.
Cree Inc.
Gupta Yogendra N.
Song Matthew J.
Summa, Allan & Addition, P.A.
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