Production method for semiconductor substrate and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C117S095000, C117S953000, C117S093000

Reexamination Certificate

active

07011707

ABSTRACT:
A reaction prevention layer is formed to prevent Si from reacting with a gallium nitride group semiconductor (semiconductor crystal A) which is deposited after the reaction prevention layer is formed. By forming a reaction prevention layer comprising a material whose melting point or thermal stability is higher than that of a gallium nitride group semiconductor, e.g., AlN, on a sacrifice layer, a reaction part is not formed in the semiconductor substrate deposited on the reaction prevention layer when the gallium nitride group semiconductor is grown by crystal growth for a long time. In short, owing to the effect that the reaction prevention layer prevents silicon (Si) from diffusing, the reaction part is generated only in the sacrifice layer and it is never formed at the upper portion of the reaction prevention layer even by growing the semiconductor crystal A at a high temperature for a long time.

REFERENCES:
patent: 5300186 (1994-04-01), Kitahara et al.
patent: 6602764 (2003-08-01), Linthicum et al.
patent: 2002/0031851 (2002-03-01), Linthicum et al.
patent: 0 647 730 (1995-04-01), None
patent: 2000-277441 (2000-10-01), None
patent: 2000-357663 (2000-12-01), None
patent: 2001-176813 (2001-06-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Production method for semiconductor substrate and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Production method for semiconductor substrate and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Production method for semiconductor substrate and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3584072

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.