Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-03-14
2006-03-14
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S095000, C117S953000, C117S093000
Reexamination Certificate
active
07011707
ABSTRACT:
A reaction prevention layer is formed to prevent Si from reacting with a gallium nitride group semiconductor (semiconductor crystal A) which is deposited after the reaction prevention layer is formed. By forming a reaction prevention layer comprising a material whose melting point or thermal stability is higher than that of a gallium nitride group semiconductor, e.g., AlN, on a sacrifice layer, a reaction part is not formed in the semiconductor substrate deposited on the reaction prevention layer when the gallium nitride group semiconductor is grown by crystal growth for a long time. In short, owing to the effect that the reaction prevention layer prevents silicon (Si) from diffusing, the reaction part is generated only in the sacrifice layer and it is never formed at the upper portion of the reaction prevention layer even by growing the semiconductor crystal A at a high temperature for a long time.
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Irokawa Yoshihiro
Ito Kenji
Nagai Seiji
Tomita Kazuyoshi
Kunemund Robert
McGinn IP Law Group PLLC
Toyoda Gosei Co,., Ltd.
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