Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1996-06-12
1998-08-11
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 14, 117104, 117105, 117915, 117929, C30B 2904
Patent
active
057922543
ABSTRACT:
Diamond film is deposited by chemical vapor deposition on the surface of a graphite mandrel which is covered with a protective coating to which the diamond film adheres. After completion of the deposition, the diamond is removed from the mandrel by sawing through the substrate to saw off a layer thereof which includes the deposition surface and the diamond film. The graphite and protective coating may be left in place for some applications or be removed either chemically or by mechanical abrasion to separate the diamond therefrom.
REFERENCES:
patent: 5114745 (1992-05-01), Jones
patent: 5264071 (1993-11-01), Anthony et al.
patent: 5273731 (1993-12-01), Anthony et al.
patent: 5443032 (1995-08-01), Vichr et al.
Kunemund Robert
Saint-Gobain/Norton Industrial Ceramics Corp.
Ulbrich Volker R.
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