Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1998-10-09
2000-05-16
Utech, Benjamin L.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
117 88, 117 89, 117105, 117951, 117952, C30B 2300
Patent
active
060631856
ABSTRACT:
Low defect density, low impurity bulk single crystals of AlN, SiC and AlN:SiC alloy are produced by depositing appropriate vapor species of Al, Si, N, C on multiple nucleation sites that are preferentially cooled to a temperature less than the surrounding surfaces in the crystal growth enclosure. The vapor species may be provided by subliming solid source material, vaporizing liquid Al, Si or Al--Si or injecting source gases. The multiple nucleation sites may be unseeded or seeded with a seed crystal such as 4 H or 6 H SiC.
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Anderson Matthew
Cree Inc.
Faust Richard S.
Utech Benjamin L.
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