Production method of opto-electronic device array

Details Production method of opto-electronic device array Production method of opto-electronic device array

2006-12-26

2006-12-26

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S085000, C117S087000, C117S088000, C117S089000, C117S102000

Reexamination Certificate

active

07153361

ABSTRACT:
An opto-electronic device array is made from a multilayer epitaxial film by the following steps. The multilayer epitaxial film is separated into a plurality of segments. The segments are transferred to a first substrate to be arranged in an array substantially. Active regions are respectively confined in the segments so that the active regions form the array.

REFERENCES:
patent: 11-307878 (1999-11-01), None
Eli Yablonovitch, et al., “Extreme selectivity in the lift-off of epitaxial GaAs films”, Applied Physics Letters, vol. 51, No. 26, Dec. 28, 1987, pp. 2222-2224.
Nan M. Jokerst, et al., “Microsystem Optoelectronic Integration for Mixed Multisignal Systems”, IEEE Journal on Selected Topics in Quantum Electronics, vol. 6, No. 6, Nov./Dec. 2000, pp. 1231-1239.

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