LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

One hundred millimeter single crystal silicon carbide wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

One hundred millimeter single crystal silicon carbide wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Organometallic compounds

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...

Oriented conductive oxide electrodes on SiO2/Si and glass

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter

Oriented ferroelectric thin-film element and manufacturing metho

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Oxidation of material for tunnel magneto-resistive sensors

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Oxide thin films and composites and related methods of...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Oxygen doping method to gallium nitride single crystal...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

P-type silicon macromolecule used in a transistor and process fo

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...

P-type single crystal zinc-oxide having low resistivity and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...

P-type ZnO single crystal and method for producing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With pretreatment or preparation of a base

Particulate-free epitaxial process

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patterned ferroelectric thin films for microwave devices

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Patterning of nanocrystalline diamond films for diamond...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Phase controlled sublimation

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Photonic band gap materials based on spiral posts in a lattice

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Planar waveguide and a process for its fabrication

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Planarized growth of III-V compound

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Plasma processing method and method for manufacturing...