Planar waveguide and a process for its fabrication

Details Planar waveguide and a process for its fabrication Planar waveguide and a process for its fabrication

1996-06-05

1999-05-04

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Fully-sealed or vacuum-maintained chamber

117 84, 117105, 117108, 117918, 117940, C30B 2912

Patent

active

059000570

ABSTRACT:
A planar waveguide and a process for making a planar waveguide is disclosed. The waveguide has a layer of dope host material formed on a substrate. The host material is a trivalent material such as a metal fluoride, wherein the metal is selected from the Group III B metals and the lanthanide series rare earth metals of the Mendeleevian Periodic Table. The dopant is a rare earth metal such as erbium. The waveguide has an emission spectrum with a bandwidth of about 60 nm for amplification of an optical signal at a wavelength of about 1.51 .mu.m to about 1.57 .mu.m. The waveguide is made by forming the layer of doped host material on a substrate. The film is formed by evaporating materials from two separate sources, one source for the dopant material and a separate source for the host material and forming a film of the evaporated materials on a substrate.

REFERENCES:
patent: 5119460 (1992-04-01), Bruce et al.
patent: 5140658 (1992-04-01), Sunshine
patent: 5240885 (1993-08-01), Aiken et al.
patent: 5248890 (1993-06-01), Luth et al.
patent: 5290730 (1994-03-01), McFarlane et al.
patent: 5379311 (1995-01-01), McFarlane et al.

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