Planarized growth of III-V compound

Details Planarized growth of III-V compound Planarized growth of III-V compound

1995-05-24

2000-02-29

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117101, 117923, 438289, 438 41, C30B 2504

Patent

active

060304529

ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of preparing a semiconductor substrate having a step on a surface thereof and growing a group III-V compound semiconductor layer on a surface of the semiconductor substrate by metal organic vapor phase epitaxy using a source gas added with halogenated hydrocarbon containing one or two halogen atoms per one molecule. The surface of a substrate with a step thereon can be planarized by depositing an embedding layer on a lower level area.

REFERENCES:
patent: 5104824 (1992-04-01), Clausen et al.
patent: 5153147 (1992-10-01), Karlicek
patent: 5212113 (1993-05-01), Azoulay et al.
patent: 5298456 (1994-03-01), Unozawa
patent: 5470785 (1995-11-01), Kondo

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