Oxidation of material for tunnel magneto-resistive sensors

Details Oxidation of material for tunnel magneto-resistive sensors Oxidation of material for tunnel magneto-resistive sensors

2005-08-02

2005-08-02

Hiteshew, Felisa (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S093000, C117S095000, C117S102000, C428S141000

Reexamination Certificate

active

06923860

ABSTRACT:
The present invention is a tunneling magnetoresistive (TMR) stack configured to operate in a current-perpendicular-to-plane (CPP) mode, wherein a sense current flows substantially perpendicular to a longitudinal plane of the barrier layer. The TMR stack has a plurality of layers including a barrier layer. The barrier layer may made of titanium and may be oxidized with an aggressive oxidation method, such as with UV illumination, for a predetermined time period. The barrier layer may be formed on a first ferromagnetic layer before oxidation, and then a second ferromagnetic layer may be formed on the oxidized barrier layer. The TMR stack exhibits an increased magnetoresistive (MR) ratio, a lower RA product, a higher breakdown voltage of the TMR stack, and greater thermal stability.

REFERENCES:
patent: 6023395 (2000-02-01), Dill et al.
patent: 6114719 (2000-09-01), Dill et al.
patent: 6335081 (2002-01-01), Araki et al.
Baltz, Alfred.Journal of Applied Physics“Influence of Vacuum Conditions on Epitaxially Grown Permalloy Films.” vol. 34, No. 6, Jun. 1963.

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