P-type single crystal zinc-oxide having low resistivity and...

Details P-type single crystal zinc-oxide having low resistivity and... P-type single crystal zinc-oxide having low resistivity and...

2005-05-24

2005-05-24

Norton, Nadine G. (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Using an energy beam or field, a particle beam or field, or...

C117S088000, C428S688000, C428S702000, C423S099000

Reexamination Certificate

active

06896731

ABSTRACT:
The present invention provides a low-resistivity p-type single-crystal zinc oxide. An n-type dopant and p-type dopant are doped into zinc oxide with higher concentration of the p-type dopant than that of the n-type dopant during forming a single-crystal of the zinc oxide through a thin film forming process. Further, an element of the second group is co-doped to allow oxygen to be stabilized.

REFERENCES:
patent: 4612411 (1986-09-01), Wieting et al.
patent: 5324365 (1994-06-01), Niwa
patent: 5420043 (1995-05-01), Niwa
patent: 5578501 (1996-11-01), Niwa
patent: 5579258 (1996-11-01), Adachi
patent: 5891243 (1999-04-01), Yoshida
patent: 6291085 (2001-09-01), White et al.
patent: 6342313 (2002-01-01), White et al.
patent: 6379521 (2002-04-01), Nishio
patent: 6410162 (2002-06-01), White et al.
patent: 6527858 (2003-03-01), Yoshida et al.
T. Yamamoto et al.; Japanese Journal of Applied Physics, vol. 38, part 2, No. 2B, pp. 166-169, Feb. 15, 1999.
K. Minegishi et al.; Japanese Journal of Applied Physics, vol. 36, part 2, No. 11A, pp. 1453-1455, Nov. 1997.
Akira Onodera, Journal of Physical Society in Japan, vol. 53, No. 4, pp. 282-286.
Akira Onodera et al., Dielectric Activity and Ferroelectricity in Piezoelectric Semiconductor Li-Doped ZnO. Japanese Journal of Applied Physics, vol. 35, (1996). Part 1, No. 9B. Sep. 1996, pp. 5160-5162.

Affiliated with

Also associated with

Rating

P-type single crystal zinc-oxide having low resistivity and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with P-type single crystal zinc-oxide having low resistivity and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and P-type single crystal zinc-oxide having low resistivity and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3418248