Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter
Patent
1995-05-03
1998-06-02
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Including change in a growth-influencing parameter
117 94, 117948, 117945, C30B 2302, C30B 2922
Patent
active
057592659
ABSTRACT:
A buffer layer having crystal orientation In a (111) face is formed on a semiconductor single-crystal (100) substrate and a ferroelectric thin film having crystal orientation in a (111) or (0001) face is then formed over the buffer layer. The buffer layer is preferably formed of MgO at a temperature ranging from 20.degree. to 600.degree. C. and at a rate ranging from 0.5 to 50 .ANG./sec. The thus formed ferroelectric thin film has its axes of polarization aligned in one direction. Using the oriented ferroelectric thin-film device, highly functional nonvolatile memories, capacitors or optical modulators can be fabricated on semiconductor substrates.
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P. Tiwari et al., "Growth of ceramic thin films on SI(100) using an in situ laser deposition technique," Department of Materials Science and Engineering, North Carolina University, Mar. 11, 1991, pp. 8358-8362.
E.J. Tarsa et al., "Growth and characterization of (111) and (001) oriented MgO films on (001) GaAs," Materials Department, University of California, Dec. 14, 1992, pp. 3276-3283.
Masuda Atsushi
Nashimoto Keiichi
Fuji 'Xerox Co., Ltd.
Kunemund Robert
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