Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber
Reexamination Certificate
2008-01-29
2008-01-29
Hiteshew, Felisa C. (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Fully-sealed or vacuum-maintained chamber
C117S084000, C117S100000
Reexamination Certificate
active
07323051
ABSTRACT:
A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system. The method includes positioning a seed crystal on the seed holder with a low porosity backing material that provides a vapor barrier to silicon carbide sublimation from the seed and that minimizes the difference in thermal conductivity between the seed and the backing material to minimize or eliminate temperature differences across the seed and likewise minimize or eliminate vapor transport from the rear of the seed that would otherwise initiate and propagate defects in the growing crystal.
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Carter, Jr. Calvin H.
Fechko, Jr. George J.
Hobgood Hudson M.
Jenny Jason R.
Leonard Robert Tyler
Cree Inc.
Hiteshew Felisa C.
Summa, Allan & Additon, P.A.
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