Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-03-08
2008-12-16
Kunemund, Robert (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S088000, C117S094000, C117S097000, C117S949000, C117S947000
Reexamination Certificate
active
07465354
ABSTRACT:
A process, for patterning a thin film that is highly resistant to conventional etching processes and that is to be deposited at a high substrate temperature, is disclosed. The process uses a liftoff method wherein a refractory material has been substituted for the conventional organic resin. The method is particularly useful for the fabrication of tunable microwave devices and ferroelectric memory elements.
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Ong Chong Kim
Tan Chin Yaw
Ackerman Stephen B.
Kunemund Robert
National University of Singapore
Saile Ackerman LLC
Song Matthew J
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