Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1998-01-09
2000-05-30
Utech, Benjamin L.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
117105, 117109, 423324, 2041574, 20415745, C30B 2300
Patent
active
060686987
ABSTRACT:
The invention relates to a p-type silicon macromolecule, with a multifaceted structure in which silicon atoms form the corners of an inner multifaceted structure having sides. Attached to each silicon atom is a doping atom. The doping atoms are attached to the silicon atoms and radiate out from the center of the molecule to form an outer multi-faceted structure having sides parallel to the inner multifaceted structure. The macromolecule forms a base facility in a transistor that comprises an emitter layer, a collector layer, connected to the base facility, and a control input structure. The control input structure comprises a dipole connected to a boundary surface on the transistor and at least one external modulation capacitor connected to the dipole. The capacitor receives a carrier signal from a control input signal. The dipole is spaced from the center a boundary surface by half a wavelength of the carrier signal. In this case, the charge carrier flows from the center of the affected surface on the emitter layer to the opposite parallel surface on the collector layer. The process includes the following steps: a) evaporation of a silicon crystal to produce a monatomic silicon vapor; b) generation of a rotating magnetic field enclosing the monatomic silicon vapor; c) injection of at least one doping material into the monatomic silicon vapor, and d) cooling of the monomolecular silicon-doping material vapor to a temperature below the crystallization temperature.
REFERENCES:
patent: 4810935 (1989-03-01), Boswell
patent: 5340428 (1994-08-01), Kodokian
patent: 5900063 (1999-05-01), Boswell et al.
Askeland, D.R., The Science and Engineering of Materials, 2nd Ed., PWS-Kent Co., Boston USA, inside front cover, 1989.
Anderson Matt
Utech Benjamin L.
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