Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-02-01
2005-02-01
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S089000, C117S090000, C117S105000, C117S106000
Reexamination Certificate
active
06849123
ABSTRACT:
To plasma-process a substrate having a large area uniformly at a high process speed to form a deposition film with uniform thickness and quality and favorable characteristics. A first high frequency power (with a frequency f1and a power P1) and a second high frequency power (with a frequency f2and a power P2) supplied to an electrode from a first high frequency power supply and a second high frequency power supply, respectively, are set so that the frequencies are equal to or higher than 10 MHz and equal to or lower than 250 MHz, a ratio of the frequency f2to the frequency f1(f2/f1) is equal to or higher than 0.1 and equal to or lower than 0.9, and a ratio of the power P2to a total power (P1+P2) is equal to or higher than 0.1 and equal to or lower than 0.9. The frequency f2is changed during processing the substrate.
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Aoki Makoto
Murayama Hitoshi
Niino Hiroaki
Shirasuna Toshiyasu
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Kunemund Robert
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