LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of making group III-V compound semiconductor wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of making mosaic array of thin semiconductor material...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of making multi-quantum well lasers

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of making semiconductor heterostructures of gallium arsen

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of making SiC single crystal and apparatus for making...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Method of making synthetic gems comprising elements...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter

Method of manufacturing a bicrystal cluster magnetic recording m

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of manufacturing a compound semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of manufacturing a group II-VI compound semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of manufacturing a nitride series III-V group...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of manufacturing a semiconductor component

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of manufacturing a semiconductor device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of manufacturing a semiconductor device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of manufacturing a semiconductor device having a semicond

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of manufacturing a single crystal thin film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of manufacturing a surface acoustic wave element

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of manufacturing a wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Method of manufacturing a wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method of manufacturing crystal of III-V compound of the...