Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-05-11
1996-03-12
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 95, 117104, 117928, 117929, C30B 2304, C30B 2904, C30B 2902
Patent
active
054977266
ABSTRACT:
A surface acoustic wave element has a diamond layer, a piezoelectric thin film formed on the diamond layer, and a pair of electrodes for generating a surface acoustic wave having a specific wavelength and extracting the surface acoustic wave, wherein at least one electrode is a copper electrode epitaxially grown on the surface of the diamond layer. To manufacture this surface acoustic wave element, after the diamond layer is formed on a substrate by epitaxial growth, the copper electrodes each having the predetermined shape are formed on the surface of the diamond layer by epitaxial growth. Since the copper electrodes formed on the diamond layer consist of high-quality single crystal copper, resistances to electromigration and stress migrations can be increased. As a result, there is provided an excellent surface acoustic wave element free from electrical defects caused by degradation and failure of the copper electrodes or free from degradation of the electrical characteristics.
REFERENCES:
patent: 4952832 (1990-08-01), Imai et al.
patent: 5221870 (1993-06-01), Nakahata et al.
Burns et al, "Epitaxial Growth of Copper-Nickel Single Crystal Alloys and Multilayers by M. B. E", Mater. Res. Soc. Symp. Proc. (1990) 203-8 abs only.
Diamond and Related Materials, by M. W. Geis "Device quality diamond substrates" vol. 1, 1992 pp. 684-687.
Textured Growth and Twinning in Polycrystalline CVD Diamond Film by Wild et al. Int. Symposium, Diamond Material, 1991 p. 224.
CVD Copper Mettalurgy for ULSI Interconnections by Arita et al. IEEE IEDM 90 pp. 39-42 & 286 IEDM p. 91.
Large-Electromigration-Resistance Copper Interconnect Technology for Sub-Half-Micron ULSI's by Ohmi et al. 1991 IEEE IEDM 91-285, 287, 288.
Hachigo Akihiro
Higaki Kenjiro
Nakahata Hideaki
Shikata Shin-ichi
Fasse W. F.
Fasse W. G.
Kunemund Robert
Sumitomo Electric Industries Ltd.
LandOfFree
Method of manufacturing a surface acoustic wave element does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a surface acoustic wave element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a surface acoustic wave element will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2094118