Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1993-05-28
1994-05-03
Chaudhuri, Olik
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
148DIG169, 117 95, 117105, 117106, 117954, H01L 2120
Patent
active
053084446
ABSTRACT:
The invention is predicated upon the discovery by applicants that exposure of a Ge surface to arsenic produces a drastic change in the step structure of the Ge surface. Subsequent exposure to Ga and growth of GaAs produces three-dimensional growth and a high threading dislocation density at the GaAs/Ge interface. However exposure of the Ge surface to Ga does not substantially change the Ge step structure, and subsequent growth of GaAs is two-dimensional with little increase in threading dislocation density. Thus a high quality semiconductor heterostructure of gallium arsenide on germanium can be made by exposing a germanium surface in an environment substantially free of arsenic, depositing a layer of gallium on the surface and then growing a layer of gallium arsenide. The improved method can be employed to make a variety of optoelectronic devices such as light-emitting diodes.
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Fitzgerald, Jr. Eugene A.
Kuo Jenn-Ming
Silverman Paul J.
Xie Ya-Hong
AT&T Bell Laboratories
Books Glen E.
Chaudhuri Olik
Paladugu Ramamohan Rao
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