Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1992-10-05
1994-05-03
Chaudhuri, Olik
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
437 83, 437 84, 437 89, 437100, 437915, 117935, H01L 2120
Patent
active
053084454
ABSTRACT:
A silicon oxide layer is formed on a silicon substrate, and an opening whose wall is sloped inward is formed in the silicon oxide layer. A seed crystalline silicon layer is formed from the opening. The seed crystalline layer is selectively oxidized while leaving the seed crystalline layer required for crystal growth. An oxide formed at this time closes the opening. Consequently, the seed crystalline layer is insulated from the silicon substrate. The seed crystalline layer is epitaxially grown, to obtain a silicon growth layer on a field oxide layer. The growth layer is insulated from the silicon substrate, and is uniform in surface direction. Accordingly, there is no parasitic capacitance due to a p-n junction between the silicon substrate and the growth layer, thereby to make it possible to perform a high-speed operation. In addition, the growth layer is uniform in surface direction, thereby to make it easy to control the conditions set so as to obtain desired device characteristics in the manufacturing processes.
REFERENCES:
patent: 4760036 (1988-07-01), Schubert
D. D. Rathman et al., "Lateral Epitaxial Overgrowth of Silicon on SiO.sub.2 ", Journal of Electro-Chemical Society: Solid-State Science and Technology, Oct. 1992, p. 2303.
T. Yonehara et al., "New SOI-Selective Nucleation Epitaxy", Proceedings of the 48th Conference on Applied Physics, Autumn 1987, 19p-Q-15, p. 583.
Chaudhuri Olik
Paladugu Ramamohan Rao
Rohm & Co., Ltd.
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