Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-05-17
2005-05-17
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S095000, C117S097000, C117S101000, C117S102000, C117S106000
Reexamination Certificate
active
06893503
ABSTRACT:
A method of producing a semiconductor device which removes catalyst elements from a silicon-containing semiconductor film while maintaining the advantage of low temperature process is provided. The method comprises the steps of: forming an amorphous semiconductor film containing silicon on a glass substrate to crystallize it by using a catalyst element; selectively introducing into the amorphous semiconductor film an impurity belonging to Group 15 to form gettering regions and regions to be gettered; and causing the catalyst element in the silicon film to move to the gettering regions by heat treatment. Through the gettering process, the crystalline silicon film can be obtained in which the concentration of nickel contained therein is sufficiently reduced.
REFERENCES:
patent: 5244819 (1993-09-01), Yue
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5426064 (1995-06-01), Zhang et al.
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5488000 (1996-01-01), Zhang et al.
patent: 5492843 (1996-02-01), Adachi et al.
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5508533 (1996-04-01), Takemura
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5534716 (1996-07-01), Takemura
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5563426 (1996-10-01), Zhang et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5569936 (1996-10-01), Zhang et al.
patent: 5580792 (1996-12-01), Zhang et al.
patent: 5585291 (1996-12-01), Ohtani et al.
patent: 5589694 (1996-12-01), Takayama et al.
patent: 5595923 (1997-01-01), Zhang et al.
patent: 5595944 (1997-01-01), Zhang et al.
patent: 5604360 (1997-02-01), Zhang et al.
patent: 5605846 (1997-02-01), Ohtani et al.
patent: 5606179 (1997-02-01), Yamazaki et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 5614426 (1997-03-01), Funada et al.
patent: 5614733 (1997-03-01), Zhang et al.
patent: 5616506 (1997-04-01), Takemura
patent: 5620910 (1997-04-01), Teramoto
patent: 5621224 (1997-04-01), Yamazaki et al.
patent: 5624851 (1997-04-01), Takayama et al.
patent: 5637515 (1997-06-01), Takemura
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5646424 (1997-07-01), Zhang et al.
patent: 5654203 (1997-08-01), Ohtani et al.
patent: 5656825 (1997-08-01), Kusumoto et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5677549 (1997-10-01), Takayama et al.
patent: 5696386 (1997-12-01), Yamazaki
patent: 5696388 (1997-12-01), Funada et al.
patent: 5700333 (1997-12-01), Yamazaki et al.
patent: 5705829 (1998-01-01), Miyanaga et al.
patent: 5712191 (1998-01-01), Nakajima et al.
patent: 5744822 (1998-04-01), Takayama et al.
patent: 5744824 (1998-04-01), Kousai et al.
patent: 5756364 (1998-05-01), Tanaka et al.
patent: 5766977 (1998-06-01), Yamazaki
patent: 5773327 (1998-06-01), Yamazaki et al.
patent: 5773846 (1998-06-01), Zhang et al.
patent: 5773847 (1998-06-01), Hayakawa
patent: 5783468 (1998-07-01), Zhang et al.
patent: 5795795 (1998-08-01), Kousai et al.
patent: 5808321 (1998-09-01), Mitanaga et al.
patent: 5811327 (1998-09-01), Funai et al.
patent: 5814540 (1998-09-01), Takemura et al.
patent: 5818076 (1998-10-01), Zhang et al.
patent: 5821138 (1998-10-01), Yamazaki et al.
patent: 5824573 (1998-10-01), Zhang et al.
patent: 5824574 (1998-10-01), Yamazaki et al.
patent: 5830784 (1998-11-01), Zhang et al.
patent: 5837619 (1998-11-01), Adachi et al.
patent: 5840118 (1998-11-01), Yamazaki
patent: 5843225 (1998-12-01), Takayama et al.
patent: 5843833 (1998-12-01), Ohtani et al.
patent: 5851862 (1998-12-01), Ohtani et al.
patent: 5858823 (1999-01-01), Yamazaki et al.
patent: 5869362 (1999-02-01), Ohtani
patent: 5869363 (1999-02-01), Yamazaki et al.
patent: 5879977 (1999-03-01), Zhang et al.
patent: 5882960 (1999-03-01), Zhang et al.
patent: 5886366 (1999-03-01), Yamazaki et al.
patent: 5888857 (1999-03-01), Zhang et al.
patent: 5888858 (1999-03-01), Yamazaki et al.
patent: 5895933 (1999-04-01), Zhang et al.
patent: 5897347 (1999-04-01), Yamazaki et al.
patent: 5904770 (1999-05-01), Ohtani et al.
patent: 5915174 (1999-06-01), Yamazaki et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5923997 (1999-07-01), Mitanaga et al.
patent: 5929464 (1999-07-01), Yamazaki et al.
patent: 5932893 (1999-08-01), Miyanaga et al.
patent: 5937282 (1999-08-01), Nakajima et al.
patent: 5940690 (1999-08-01), Kusumoto et al.
patent: 5942768 (1999-08-01), Zhang
patent: 5946560 (1999-08-01), Uochi et al.
patent: 5949115 (1999-09-01), Yamazaki et al.
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 5956579 (1999-09-01), Yamazaki et al.
patent: 5961743 (1999-10-01), Yamazaki et al.
patent: 6251712 (2001-06-01), Tanaka et al.
patent: 6355509 (2002-03-01), Yamazaki
patent: 5-109737 (1993-04-01), None
patent: 08-330602 (1996-12-01), None
patent: 08-340127 (1996-12-01), None
patent: 09-045616 (1997-02-01), None
Nakajima Setsuo
Ohnuma Hideto
Ohtani Hisashi
Yamazaki Shunpei
Fish & Richardson P.C.
Kunemund Robert
Semiconductor Energy Laboratory Co,. Ltd.
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