Method of manufacturing a single crystal thin film

Details Method of manufacturing a single crystal thin film Method of manufacturing a single crystal thin film

1996-03-07

1997-11-11

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 89, 117107, C30B 2516

Patent

active

056859058

ABSTRACT:
In the preparation stage before the manufacturing of the single crystal thin film 13, growth conditions are determined by conducting a vapor phase growth without rotating the rotatable holder 14 on its axis and making adjustments such that the growth rate of the single crystal thin film 13 is laterally asymmetric with respect to the virtual center axis on the holder 14 parallel to the feeding direction of the source material gas 19, and then said single crystal thin film is manufactured based on said growth conditions.

REFERENCES:
patent: 4147571 (1979-04-01), Stringfellow et al.
patent: 4719124 (1988-01-01), Lu et al.
patent: 5456205 (1995-10-01), Sheldon
patent: 5505159 (1996-04-01), Mochizuki et al.

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