Method of manufacturing a compound semiconductor

Details Method of manufacturing a compound semiconductor Method of manufacturing a compound semiconductor

1993-11-15

1995-03-14

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 97, 117106, 437105, 156643, H01L 2120, H01L 21306

Patent

active

053968620

ABSTRACT:
A compound semiconductor thin film is grown on a compound semiconductor surface, which is cleaned by irradiating the surface with gas containing at least hydrogen molecules and by efficiently removing contaminant on the surface at low temperature. A beam containing at least hydrogen molecules is irradiated from a plasma generating room attached to a MBE chamber, and cleans the surface of a compound semiconductor at low temperature. By an additional mechanism attached to the MBE chamber, a compound semiconductor thin film of high quality is grown on the cleaned surface of the compound semiconductor.

REFERENCES:
patent: 4477311 (1984-10-01), Mimura et al.
patent: 4632711 (1986-12-01), Fujita et al.
patent: 5133830 (1992-07-01), Asaka
M. Tonouchi, et al. "Reactive etching of polycrystalline CdS and ZnS films by electron cyclotron resonance hydrogen plasma" J. Appl. Phys 70 (6), 15 Sep. 1991 pp. 3367-3369.
K. Menda et al. "ZnSe Homo-Epitaxial Growth by Molecular Beam Epitaxy" J. Crystal Growth 86 (1988) pp. 342-347.

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