Method of making GaN single crystal and apparatus for making GaN

Details Method of making GaN single crystal and apparatus for making GaN Method of making GaN single crystal and apparatus for making GaN

1999-01-22

2000-10-24

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 84, 117 89, 117952, C30B 2516

Patent

active

061360937

ABSTRACT:
An apparatus comprises a Ga-disposing section in which Ga is disposed; a seed-crystal-disposing section in which a seed crystal of GaN is disposed; a synthesis vessel adapted to accommodate the Ga-disposing section, the seed-crystal-disposing section, and a gas containing nitrogen; heating means adapted to heat the Ga-disposing section and the seed-crystal-disposing section; and a control section for transmitting to the heating means a command for heating the Ga to an evaporation temperature of Ga or higher and heating the seed crystal to a temperature higher than that of the Ga, wherein the Ga evaporated by the heating means is adapted to react with the nitrogen of a nitrogen component in the gas so as to yield a GaN-forming gas, the GaN-forming gas being adapted to reach the seed-crystal-disposing section.

REFERENCES:
patent: 5637531 (1997-06-01), Porowski et al.
patent: 5976398 (1999-11-01), Yagi
Nakamura, S. GaN Growth Using GaN Buffer Layer, Japanese Journal of Applied Physics, vol. 30, No. 10A, Oct. 1991, pp. L1705-L1707.

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