Method of manufacturing a semiconductor component

Details Method of manufacturing a semiconductor component Method of manufacturing a semiconductor component

2001-01-16

2003-08-26

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

Reexamination Certificate

active

06610143

ABSTRACT:

BACKGROUND OF THE INVENTION
This invention relates, in general, to electronics, and more particularly, to methods of manufacturing semiconductor components and semiconductor components thereof.
Bipolar transistors are used in many different electronic applications, including integrated circuits and discrete components. Homojunction bipolar transistors have limited high frequency applications because their transit frequency (f
T
) is typically well below 40 GigaHertz (GHz). Heterojunction Bipolar Transistors (HBT) have superior high frequency characteristics because their f
T
is greater than that for homojunction bipolar transistors. In many instances, the f
T
of an HBT is 100 GHz or higher.
As an example, a HBT can include a silicon substrate and a silicon germanium carbon layer contacting the silicon substrate. The interface between the silicon substrate and the silicon germanium carbon layer forms the heterojunction. However, existing methods for manufacturing HBTs do not produce HBTs exhibiting superior high frequency characteristics.
Accordingly, a need exists for a method of manufacturing a semiconductor component where the method is compatible with existing semiconductor processing techniques and where the method produces a semiconductor component that has superior high frequency performance characteristics.


REFERENCES:
patent: 5084409 (1992-01-01), Beam, III et al.
patent: 5252500 (1993-10-01), Sato
patent: 5262335 (1993-11-01), Streit et al.
patent: 5481120 (1996-01-01), Mochizuk et al.
patent: H1637 (1997-03-01), Offord et al.
patent: 5804487 (1998-09-01), Lammert
patent: 5885847 (1999-03-01), Yoon et al.
patent: 6387768 (2002-05-01), Sakamoto
patent: 05/29332 (1993-02-01), None
patent: WO0003427 (2000-01-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor component does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor component, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor component will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3111029