LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

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Method and device for manufacturing spherical semiconductor...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With pretreatment or preparation of a base

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Method and device for producing an electronic GaAs detector...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method and device for regulating the differential pressure...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method and system for adjusting semiconductor processing equipme

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

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Method and system for forming a variable thickness seed layer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method and system for forming a variable thickness seed layer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method and system for manufacturing III-V Group compound...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method and system for providing a thin film with a...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With movement of substrate or vapor or gas supply means...

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Method and system for providing a thin film with a...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With movement of substrate or vapor or gas supply means...

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Method and system for semiconductor crystal production with...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

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METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for achieving low defect density GaN single crystal...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for atomic layer deposition (ALD) of silicon oxide film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for boron contamination reduction in IC fabrication

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for catalytic growth of nanotubes or nanofibers...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for changing surface termination of a perovskite...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for coating inner surfaces of equipment

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for controlling roughness on surface of monocrystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for controlling thin film growth of compound semiconducto

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

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Method for correction of thin film growth temperature

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

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