Method and system for adjusting semiconductor processing equipme

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

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117 86, 374137, 374162, C30B 2300, G01K 1114

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active

061267449

ABSTRACT:
A method to prepare thermal reactors for operation after installation, modification, upgrade and routine preventive maintenance operations. Variations in reaction rate across a wafer surface are used to determine corresponding variations in surface temperature across the wafer surface. Surface temperature variations results in thickness variations of a chemically deposited layer. For selected thicknesses, a chemically deposited layer is transparent and exhibits color variations corresponding to the thickness variations that result from the surface temperature variations. These color variations are then correlated to surface temperature variations to enable wafer heating adjustments to reduce surface temperature variations.

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