Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Patent
1997-08-15
2000-10-03
Powell, William
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
117 86, 374137, 374162, C30B 2300, G01K 1114
Patent
active
061267449
ABSTRACT:
A method to prepare thermal reactors for operation after installation, modification, upgrade and routine preventive maintenance operations. Variations in reaction rate across a wafer surface are used to determine corresponding variations in surface temperature across the wafer surface. Surface temperature variations results in thickness variations of a chemically deposited layer. For selected thicknesses, a chemically deposited layer is transparent and exhibits color variations corresponding to the thickness variations that result from the surface temperature variations. These color variations are then correlated to surface temperature variations to enable wafer heating adjustments to reduce surface temperature variations.
REFERENCES:
patent: 4234563 (1980-11-01), Rippe
patent: 4348803 (1982-09-01), Sasaki
patent: 4538912 (1985-09-01), Shaw, Jr.
patent: 4659427 (1987-04-01), Barry et al.
patent: 4891499 (1990-01-01), Moslehi
patent: 5229303 (1993-07-01), Donnelly, Jr. et al.
patent: 5258602 (1993-11-01), Naselli et al.
patent: 5288364 (1994-02-01), Burt et al.
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5330935 (1994-07-01), Dobuzinsky et al.
patent: 5436172 (1995-07-01), Moslehi
patent: 5497016 (1996-03-01), Koh
patent: 5504017 (1996-04-01), Yue et al.
patent: 5564830 (1996-10-01), Bobel et al.
patent: 5635409 (1997-06-01), Moslehi
patent: 5773316 (1998-06-01), Kurosaki et al.
patent: 5775808 (1998-07-01), Pan
patent: 5825804 (1998-10-01), Sai
Wolf and Tauber, "Silicon Processing for the VLSI Era", vol. 1 (Sunset Beach CA: Lattice Press): 125-128, 1986.
"Comparison of Temperature Control Methods in Cold-Wall Single-Wafer LPCVD System", E.G. Colgan, K.Y. Ahn and P.M. Fryer, 1989 Materials Research Society, pp. 205-209.
"Nondestructive Determination of Thickness and Refractive Index of Transparent Films", W. A. Pliskin and E.E. Conrad, IBM Journal, Jan. 1964, pp. 43-51.
"Deposition and Electrical Properties of In Situ Phosphorus-Doped Silicon Films Formed by Low-Pressure Chemical Vapor Deposition", Arthur J. Learn and Derrick W. Foster, Journal of Applied Physics, Mar. 1, 1987, vol. 61, No. 5, pp. 1898-1904.
"Deposition Properties of Silicon Films Formed From Silane in a Vertical-Flow Reactor", Derrick W. Foster, Arthur J. Learn and T. I. Kamins, Journal of Vacuum Science & Technology B, Second Series, vol. 4, No. 5, Sep./Oct. 1986, pp. 1182-1186.
"Semi-Insulating Polysilicon (SIPOS) Deposition in a Low Pressure CVD Reactor", Michael L. Hitchman and James Kane, Journal of Crystal Growth 55 (1981), pp. 485-500, North-Holland Publishing Company.
"Polysilicon Growth Kinetics in a Low Pressure Chemical Vapour Deposition Reactor", M.L. Hitchman, J. Kane and A. E. Widmer, Thin Solid Films, 59 (1989) pp. 231-247.
"Is the Vacancy in Amorphous Silicon Difference from Crystalline Silicone?", Eunja Kim and Young Hee Lee, Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, pp. 2685-2688.
"Chemical Reaction Mechanism of Etching Process by Chlorine on Silicon", Koichi Kato, pp. 529-532, Lockwood, D.J. (Ed.), Proceedings of the 22.sup.nd International Conference on the Physics of Semiconductors, vol. 1, Aug. 15-19, 1994, Vancouver, BC, Canada (Singapore: World Scientific, 1995).
"Thermodynamic Properties and Phase Diagram of Silicon from First-Principles", Osamu Sugino and Roberto Car, pp. 197-200, Lockwood, D.J.(Ed.), Proceedings of the 22.sup.nd International Conference on the Physics of Semiconductors, vol. 1, Aug. 15-19, 1994, Vancouver, BC, Canada (Singapore: World Scientific, 1995.)
"Thermal Model Validation for Rapid Thermal Chemical Vapor Deposition of Polysilicon", Charles Schaper and Thomas Kailath, J. Electrochem. Soc., vol. 143, No. 1, Jan. 1996, pp. 374-381.
"A Mathematical Model of the Hydrodynamics and Gas-Phase Reactions in Silicon LPCVD in a Single-Wafer Reactor" C. R. Kleijn, J. Electrochem. Soc., vol. 138, No. 7, Jul. 1991, pp. 2190-2200.
"The Formation of Boron-Doped Polycrystalline Si with Extremely Low Resistivities at Low Temperatures", Junichi Shiozawa, Yoshio Kasai, Yuu-ichi Mikata, and Kikuo Yamabe, J. Electrochem. Soc., vol. 141, No. 5, May 1994, pp. 1334-1338.
"Rugged Surface Polycrystalline Silicon Film Deposition and Its Application in a Stacked Dynamic Random Access Memory Capacitor Electrode", M. Ino. J. Miyano, H. Kurogi, H. Tamura, Y. Nagatomo and M. Yoshimaru, J. Vac. Sci. Technol. B 14(2), Mar./Apr. 1996, pp. 751-756.
W. M. Cranton, D. M. Spink, R. Stevens and C. B. Thomas, Growth and dielectric characterization of yttrium oxide thin films deposited on Si by r.f.-magnetron sputtering, 2194 Thin Solid Films, 226 (1993) Apr. 15, No. 1, Lausanne, CH.
Hawkins Mark Richard
van der Jeugd Cornelius Alexander
Vyne Robert Michael
ASM America Inc.
Champagne Donald L.
Powell William
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