Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Patent
1992-10-09
1995-03-28
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
437105, 437107, H01L 21203, C30B 2100
Patent
active
054007399
ABSTRACT:
A molecular beam epitaxy (MBE) system (10) is provided to grow thin film, epitaxy layers (44, 46, 48, 50) on compound semiconductor substrates (40). A mass spectrometer detector (95) is used to monitor and control the flux from selected sources (21, 23, 25, 27) within the MBE system (10). A uniform layer of indium gallium arsenide (46, 50) may be grown on a semiconductor substrate (40) by controlling the indium flux with respect to substrate (40) temperature and time. An epitaxy layer (46) of indium gallium arsenide with uniform mole fraction concentration and reduced lattice strain is produced.
REFERENCES:
patent: 4639377 (1987-01-01), Yamamoto
patent: 5171399 (1992-12-01), Brennan et al.
T. M. Brennan, et al "Application of Reflection Mass Spectrometry to Molecular-Beam Epitaxial Growth of IAlAs and InGaAs" J. Vac. Sci. Technology B7 (2), Mar./Apr. 1989 pp. 277-282.
W. M. Lau, et al "Capping and Decapping of InP and InGaAs Surfaces" J. Appl. Phys. 67 (2), 15 Jan. 1990 pp. 768-773.
R. S. Smith, et al "An Electrical and Photoluminescence Study of Pseudomorphic GaAs/In.sub.11 Ga.sub..89 As/Al.sup..23 Ga.sup..77 As HEMT Structures" IEE Colloquium on Heterojunction and Quantym Well Devices: Physics, Engineering & Applications (DIG. No. 108) IEE, 90 pp. (1988) pp. 13/1-4. (abstract only).
G. J. Davies & David Williams, "III-V MBE Growth Systems", The Technology & Physics of Molecular Beam Epitaxy, Plenum Press, pp. 15-18 & 22.
Yasuhiro Shiraki, "Silicon Molecular Beam Deposition", The Technology and Physics of Molecular Beam Epitaxy, Plenum Press, pp. 345-348 & 398.
Celii Francis G.
Kao Yung-Chung
Fleck Linda J.
Kestersom James C.
Kunemund Robert
Pylant Chris D.
Stoltz Richard A.
LandOfFree
Method for controlling thin film growth of compound semiconducto does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for controlling thin film growth of compound semiconducto, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for controlling thin film growth of compound semiconducto will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2243929