Method for controlling roughness on surface of monocrystal

Details Method for controlling roughness on surface of monocrystal Method for controlling roughness on surface of monocrystal

1993-01-27

1995-06-27

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117913, C30B 2308

Patent

active

054270553

ABSTRACT:
A method for controlling roughness on a surface of a monocrystal comprises supplying atomes for deposition on the surface of the monocrystal having the roughness under irradiation with ions having controlled energy to carry out epitaxial growth, thereby reducing the roughness.

REFERENCES:
patent: 4983539 (1991-01-01), Yamagawa et al.
Journal of the Electrochemical Society, vol. 127, No. 2, (Feb. 1980) Takashi Unagami, "Formation Mechanism of Porous Silicon Layer by Anodization in HF Solution".
Journal of Electronic Materials, vol. 12, No. 6, (Nov. 1983), Hiroshi Takai et al., "Isolation Of silicon Film Grown On Porous Silicon Layer".
Solid State Devices and Materials, (Aug. 27-29, 1991), pp. 559-561, A. Ohkura et al., "The Optimization of In-Situ Thermal Cleaning Focused on Surface Microroughness for Future Si Epitaxial Growth".
Patent Abstracts of Japan, vol. 015, No. 484 (C-0892) (Dec. 9, 1991), and JP-A-32 08 887/(Matsushita Electric Industrial Co.) Sep. 12, 1991.
Journal of Electronic Materials, vol. 12, No. 6, 1983, pp. 973-982, H. Takai et al., pp. 974-975,pp. 978-979; FIGS. 1.4.
Thin Solid Films, vol. 106, No. 1/2, (Aug. 1983), pp. 3--136, Y. Ota, "Silicon Molecular Beam Epitaxy".
Journal of Vacuum Science and Technology: Part B., vol. 3, No. 2, (Mar. 1985), pp. 732-735, M. I. J. Beale et al., "A study of silicon MBE on porous silicon substrates".
Applied Physics Letters, vol. 48, No. 26, (Jun. 30, 1986), pp. 1793-1795, T. L. Line et al., "100 .mu.m-wide silicon-on-insulator structures by Si molecular beam epitaxy growth on porous silicon".

Affiliated with

Also associated with

Rating

Method for controlling roughness on surface of monocrystal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for controlling roughness on surface of monocrystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for controlling roughness on surface of monocrystal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-281123