Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2008-04-01
2008-04-01
Kunemund, Robert (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S087000, C117S088000, C117S089000, C117S090000, C118S7230AN, C118S719000, C427S248100, C427S532000
Reexamination Certificate
active
07351285
ABSTRACT:
A method and system for forming a variable thickness seed layer on a substrate for a subsequent metal electrochemical plating process, where the seed layer thickness profile improves uniformity of the electroplated metal layer compared to when using a constant thickness seed layer. The method includes providing a substrate in a process chamber containing a showerhead, with the center of the substrate generally aligned with an inner gas delivery zone of the showerhead and the edge of the substrate generally aligned with an outer gas delivery zone of the showerhead. The method further includes depositing a seed layer on the substrate by exposing the substrate to a first gas containing a metal-containing precursor flowed through the inner gas delivery zone, and exposing the substrate to a second gas flowed through the outer gas delivery zone, whereby the seed layer is deposited with a thickness at the edge of the substrate that is less than the thickness at the center of the substrate.
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Kunemund Robert
Rao G. Nagesh
Tokyo Electron Limited
Wood Herron & Evans LLP
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