Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-07-18
2006-07-18
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S105000, C117S106000, C117S107000, C117S108000, C117S949000
Reexamination Certificate
active
07077904
ABSTRACT:
The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature and high deposition rate via the atomic layer deposition process using a Si2Cl6source unlike a conventional atomic layer deposition process using a SiCl4source. The atomic layer deposition apparatus used in the above process can be in-situ cleaned effectively at low temperature using a HF gas or a mixture gas of HF gas and gas containing —OH group.
REFERENCES:
patent: 3313792 (1967-04-01), Duck et al.
patent: 5037514 (1991-08-01), Yamazaki
patent: 5470800 (1995-11-01), Muroyama
patent: 6037275 (2000-03-01), Wu et al.
patent: 6090442 (2000-07-01), Klaus et al.
patent: 6270572 (2001-08-01), Kim et al.
patent: 6391803 (2002-05-01), Kim et al.
patent: 6465371 (2002-10-01), Lim
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6664156 (2003-12-01), Ang et al.
patent: 2002/0001974 (2002-01-01), Chan
patent: 2002/0047151 (2002-04-01), Kim et al.
patent: 2002/0068466 (2002-06-01), Lee et al.
patent: 2002/0164890 (2002-11-01), Kwan et al.
patent: 2003/0015764 (2003-01-01), Raaijmakers et al.
patent: 2003/0188682 (2003-10-01), Tois et al.
patent: 2004/0096582 (2004-05-01), Wang et al.
patent: 1 003 210 (2000-05-01), None
patent: 1 096 042 (2001-05-01), None
patent: 1 139 399 (2001-10-01), None
patent: 06132276 (1994-05-01), None
patent: 10189582 (1998-07-01), None
patent: 2001002990 (2001-01-01), None
patent: 02-2579 (2002-01-01), None
patent: 02-44422 (2002-06-01), None
patent: 2002-85487 (2002-11-01), None
Klaus, J.W., et al., “Atomic layer controlled growth of SiO2films using binary reaction sequence chemistry,” American Institute of Physics, 1997, pp. 1092-1094.
Cho Byoung Ha
Kim Jung Soo
Kim Yong Il
Lee Won Hyung
Shin Cheol Ho
Kunemund Robert
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
LandOfFree
Method for atomic layer deposition (ALD) of silicon oxide film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for atomic layer deposition (ALD) of silicon oxide film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for atomic layer deposition (ALD) of silicon oxide film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3598968