Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2006-11-14
2006-11-14
Gupta, Yogendra N. (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C117S084000, C117S085000, C117S089000, C117S105000
Reexamination Certificate
active
07135073
ABSTRACT:
What is described here is a method and a temperature management and reaction chamber system for the production of nitrogenous semiconductor crystal materials of the form AXBYCZNVMW, wherein A, B, C represent elements of group II or III, N represents nitrogen, M represents an element of group V or VI, and X, Y, Z, V, W represent the mol fraction of each element in this compound, operating on the basis of gas phase compositions and gas phase successions. The invention excels itself by the provisions that for the production of the semiconductor crystal materials the production process is controlled by the precise temperature control of defined positions in the reaction chamber system under predetermined conditions.
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Heuken Michael
Jürgensen Holger
Protzmann Harry
Schmitz Dietmar
Schön Oliver
Aixtron AG
Gupta Yogendra N.
Song Matthew J.
St. Onge Steward Johnston & Reens LLC
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