Use of hard masks during etching of openings in integrated circu
Use of high-K dielectric material in modified ONO structure...
Use of hydrocarbon addition for the elimination of...
Use of hydrogen doping for protection of low-k dielectric...
Use of hydrogen implantation to improve material properties...
Use of implanted ions to reduce oxide-nitride-oxide (ONO)...
Use of in-situ HCL etch to eliminate by oxidation...
Use of indium to define work function of p-type doped...
Use of inductively-coupled plasma in plasma-enhanced...
Use of ion implantation in chemical etching
Use of knocked-on oxygen atoms for reduction of transient...
Use of laser energy transparent stop layer to achieve...
Use of linear injectors to deposit uniform selective ozone...
Use of linear injectors to deposit uniform selective ozone...
Use of linear injectors to deposit uniform selective ozone...
Use of low-high slurry flow to eliminate copper line damages
Use of mask shadowing and angled implantation in fabricating...
Use of membrane properties to reduce residual stress in an...
Use of membrane properties to reduce residual stress in an...
Use of metallocenes to inhibit copper oxidation during...