Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-03-20
2007-03-20
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S303000, C438S595000, C257SE21278
Reexamination Certificate
active
10634352
ABSTRACT:
A process for enhanced selective deposition of a silicon oxide onto a substrate by pulsing delivery of the reactants through a linear injector is disclosed. The silicon oxide layer is formed by the ozone decomposition of TEOS at relatively low temperatures and relatively high pressures. The ozone delivery is pulsed on and off. Optionally, the delivery of the ozone and the delivery of the TEOS are pulsed on and off alternately.
REFERENCES:
patent: 4470852 (1984-09-01), Ellsworth
patent: 4717678 (1988-01-01), Goth
patent: 5320975 (1994-06-01), Cedarbaum et al.
patent: 5399513 (1995-03-01), Liou et al.
patent: 5665644 (1997-09-01), Sandhu
patent: 5851900 (1998-12-01), Chu et al.
patent: 5855957 (1999-01-01), Yuan
patent: 5882993 (1999-03-01), Gardner et al.
patent: 6050506 (2000-04-01), Guo et al.
patent: 6051881 (2000-04-01), Klein et al.
patent: 6090693 (2000-07-01), Gonzalez et al.
patent: 6121086 (2000-09-01), Kuroda et al.
patent: 6121651 (2000-09-01), Furukawa et al.
patent: 6149974 (2000-11-01), Nguyen et al.
patent: 6368986 (2002-04-01), Budge et al.
patent: 6387764 (2002-05-01), Curtis et al.
patent: 6503851 (2003-01-01), Budge et al.
patent: 6569742 (2003-05-01), Taniguchi et al.
patent: 6602807 (2003-08-01), Budge et al.
patent: 6617230 (2003-09-01), Budge et al.
patent: 6821854 (2004-11-01), Kanda et al.
patent: 2004/0029402 (2004-02-01), Budge et al.
patent: 406283526 (1994-10-01), None
Budge William
Hill Christopher W.
Sandhu Gurtej S.
Ghyka Alexander
Micro)n Technology, Inc.
Whyte Hirschboeck Dudek SC
LandOfFree
Use of linear injectors to deposit uniform selective ozone... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Use of linear injectors to deposit uniform selective ozone..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Use of linear injectors to deposit uniform selective ozone... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3724754