Use of linear injectors to deposit uniform selective ozone...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S303000, C438S595000, C257SE21278

Reexamination Certificate

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10634352

ABSTRACT:
A process for enhanced selective deposition of a silicon oxide onto a substrate by pulsing delivery of the reactants through a linear injector is disclosed. The silicon oxide layer is formed by the ozone decomposition of TEOS at relatively low temperatures and relatively high pressures. The ozone delivery is pulsed on and off. Optionally, the delivery of the ozone and the delivery of the TEOS are pulsed on and off alternately.

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