Semiconductor device manufacturing: process – Chemical etching – Altering etchability of substrate region by compositional or...
Reexamination Certificate
2011-08-30
2011-08-30
Norton, Nadine G (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Altering etchability of substrate region by compositional or...
Reexamination Certificate
active
08008207
ABSTRACT:
A method for controlling chemical dry etching to improve smoothness of an etched surface is disclosed. Ions are implanted into a surface to form a volatilizable compound at a temperature low enough to avoid, reduce, or eliminate formation of three-dimensional structures of the volatilizable compound that might create the roughness at an etched surface of the volatilizable compound. The ions are applied in a sufficient energy to penetrate to a predetermined depth of material that is to be removed from the surface in an etching cycle, and in a sufficient dosage to achieve full formation of the volatilizable compound. The surface of the volatilizable compound is exposed to a gas composition for a time duration sufficient to completely etch the volatilizable compound.
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Nasser-Ghodsi Mehran
Yu Ming Lun
Duclair Stephanie
Isenberg Joshua D.
JDI Patent
KLA-Tencor Technologies Corporation
Norton Nadine G
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