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Methods of preventing reduction of IrOx during PZT formation...

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
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Methods of preventing reduction of IrOx during PZT formation...

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Methods of preventing reduction of IrOx during PZT formation...

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Methods of preventing reduction of irox during PZT formation...

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Methods to create high-k dielectric gate electrodes with...

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Methods to cure the effects of hydrogen annealing on...

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MFIS ferroelectric memory array on SOI and method of making...

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MFMOS capacitors with high dielectric constant materials

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MFOS memory transistor & method of fabricating same

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MgO tunnel barriers and method of formation

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Microelectronic piezoelectric structure and method of...

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Microsensor with ferroelectric material and method for...

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Minimally spaced MRAM structures

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Mitigation of edge degradation in ferroelectric memory...

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Mixed noble metal/noble metal oxide bottom electrode for...

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MOCVD and annealing processes for C-axis oriented...

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
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MOCVD of TiO2 thin film for use as FeRAM H2 passivation layer

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
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MOCVD selective deposition of c-axis oriented Pb5Ge3O11 thin...

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MRAM

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MRAM arrays with reduced bit line resistance and method to...

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