MOCVD of TiO2 thin film for use as FeRAM H2 passivation layer

Details MOCVD of TiO2 thin film for use as FeRAM H2 passivation layer MOCVD of TiO2 thin film for use as FeRAM H2 passivation layer

2005-02-01

2005-02-01

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S243000, C438S244000, C438S248000, C438S253000, C438S386000, C438S387000, C438S396000

Reexamination Certificate

active

06849467

ABSTRACT:
A method of forming an H2passivation layer in an FeRAM includes preparing a silicon substrate; depositing a layer of TiOxthin film, where 0<x<2, on a damascene structure; plasma space etching of the Ti or TiOxthin film to form a TiOxsidewall; annealing the TiOxside wall thin film form a TiO2thin film; depositing a layer of ferroelectric material; and metallizing the structure to form a FeRAM.

REFERENCES:
patent: 6642563 (2003-11-01), Kanaya
patent: 6645807 (2003-11-01), Tsuzumitani et al.

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