Mixed noble metal/noble metal oxide bottom electrode for...

Details Mixed noble metal/noble metal oxide bottom electrode for... Mixed noble metal/noble metal oxide bottom electrode for...

2006-09-05

2006-09-05

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S295000

Reexamination Certificate

active

07101720

ABSTRACT:
A method is provided for forming a single-phase c-axis PGO film overlying a Pt metal electrode. Although the method is summarized in the context of a Pt bottom electrode, it has a broader application to other noble metals. The method comprises: forming a bottom electrode mixture of Pt and Pt3O4; forming a single-phase c-axis PGO thin film overlying the bottom electrode; and, forming a top electrode overlying the PGO thin film. Forming a bottom electrode mixture of a Pt and Pt3O4includes: forming a Pt first layer; and, forming a second layer, interposed between the first layer and the PGO thin film, of fully oxidized Pt3O4. In other aspects, forming a bottom electrode mixture of Pt and Pt3O4includes forming a polycrystalline mixture of Pt and Pt3O4. A c-axis PGO film capacitor is also provided. Again, a Pt bottom electrode is described, along with other noble metal bottom electrodes.

REFERENCES:
patent: 6586260 (2003-07-01), Zhang et al.
patent: 6825519 (2004-11-01), Li et al.
patent: 6897074 (2005-05-01), Zhang et al.

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