MgO tunnel barriers and method of formation

Details MgO tunnel barriers and method of formation MgO tunnel barriers and method of formation

2011-08-30

2011-08-30

Fourson, III, George (Department: 2823)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257SE21208

Reexamination Certificate

active

08008097

ABSTRACT:
MgO tunnel barriers are formed by depositing a thin layer of Mg on a suitable underlayer, and then directing oxygen and additional Mg towards the Mg layer. The oxygen reacts with the additional Mg and the Mg in the Mg layer to form a MgO tunnel barrier that enjoys excellent tunneling characteristics. The MgO tunnel barriers so formed may be used in magnetic tunnel junctions having tunneling magnetoresistance (TMR) values of greater than 100%. The highest TMR values are observed for junctions that have been annealed and that have a (100) crystallographic orientation.

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