MRAM

Details MRAM MRAM

2011-04-05

2011-04-05

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S770000

Reexamination Certificate

active

07919334

ABSTRACT:
Disclosed is a method to convert a low resistance cell in a MRAM device to a capacitive cell. The low resistance cell has a plurality of layers on a substrate. At least one layer remote from the substrate is sensitive to oxygen infusion. The method includes removing a cap layer of the cell and applying an oxygen barrier around the cell to expose at least a part of a surface of the at least one layer remote from the substrate. The at least one layer is oxidized. The oxygen barrier is removed.

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