Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2009-07-14
2011-11-08
Dang, Phuc (Department: 2892)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S014000, C438S257000, C257S303000, C257S310000
Reexamination Certificate
active
08053252
ABSTRACT:
A ferroelectric memory device is fabricated while mitigating edge degradation. A bottom electrode is formed over one or more semiconductor layers. A ferroelectric layer is formed over the bottom electrode. A top electrode is formed over the ferroelectric layer. The top electrode, the ferroelectric layer, and the bottom electrode are patterned or etched. A dry clean is performed that mitigates edge degradation. A wet etch/clean is then performed.
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Celii Francis G.
Hall Lindsey H.
Summerfelt Scott R.
Udayakumar Kezhakkedath R.
Brady III Wade J.
Dang Phuc
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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