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Silicon membrane with controlled stress

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Patent

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Silicon single crystal wafer, epitaxial silicon wafer, and...

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Reexamination Certificate

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Silicon wafers for producing oxide layers of high breakdown stre

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Patent

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Silicon wafers having controlled precipitation distribution

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Patent

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Silicon-on-insulator islands

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Reexamination Certificate

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Single crystal silicon substrate

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Patent

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Structure for improving gate oxide integrity for a semiconductor

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Patent

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Thermally annealed wafers having improved internal gettering

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Reexamination Certificate

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Wafer alignment mark utilizing parallel grooves and process

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Patent

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Wafer and method of working the same

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Patent

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Wafer having a laser mark on chamfered edge

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Patent

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Wafer having chamfered bend portions in the joint regions betwee

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Patent

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Wafer marking

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Reexamination Certificate

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