Silicon membrane with controlled stress

Details Silicon membrane with controlled stress Silicon membrane with controlled stress

1990-08-09

1992-05-05

Chaudhuri, Olik

Metal treatment

Barrier layer stock material, p-n type

With recess, void, dislocation, grain boundaries or channel...

437 86, 437901, 437974, 437966, 148DIG159, 357 26, H01L 2984

Patent

active

051103737

ABSTRACT:
A method for fabricating a silicon membrane with predetermined stress characteristics. A silicon substrate is doped to create a doped layer as thick as the desired thickness of the membrane. Stress within the doped layer is controlled by selecting the dopant based on its atomic diameter relative to silicon and controlling both the total concentration and concentration profile of the dopant. The membrane is then formed by electrochemically etching away the substrate beneath the doped layer.

REFERENCES:
patent: 4234361 (1980-11-01), Guckec et al.
patent: 4372803 (1983-02-01), Gigante
patent: 4588472 (1986-05-01), Shinizu
patent: 4618397 (1986-10-01), Simizu et al.
patent: 4664722 (1987-05-01), Hirata et al.
patent: 4946735 (1990-08-01), Lee et al.
patent: 4952446 (1990-08-01), Lee et al.
patent: 4978421 (1990-12-01), Bassous et al.
Yagi, K., "Anomalous Diffusion of Phosphorus into Silicon", Japanese Journal of Applied Physics, vol. 9, No. 3, 1970.
Hirata et al., "A Silica Diaphragm Formation" For Pressure Sensor By Analic Oxidation Etch Stop38 , IEEE 1985.
Waggener, H., "Electrochemically Controlled Thinning of Silicon", B.S.T.J. Brief, Bell System Technical Journal, Mar. 1970.

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