Silicon wafers for producing oxide layers of high breakdown stre

Details Silicon wafers for producing oxide layers of high breakdown stre Silicon wafers for producing oxide layers of high breakdown stre

1988-09-28

1990-09-04

Chaudhuri, Olik

Metal treatment

Barrier layer stock material, p-n type

With recess, void, dislocation, grain boundaries or channel...

148 333, 437 12, 437228, 437239, H01L 21304, H01L 21306, H01L 21322

Patent

active

049541897

ABSTRACT:
Silicon wafers and a process for the production thereof which produces was having intrinsic gettering action and on which thin oxide layers with high breakdown strength can be produced. During the production, the wafers are subjected to a treatment which smooths the wafer surface, for example, by repolishing, after the intrinsic getters have been produced in the interior of the wafer. Oxide layers subsequently deposited are outstanding for an increased breakdown strength compared with untreated wafers.

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patent: 4659400 (1987-04-01), Garbis et al.
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