Transistors having buried n-type and p-type regions beneath...
Transistors having buried p-type layers beneath the source...
Transistors having controlled conductive spacers, uses of such t
Transistors having controlled conductive spacers, uses of such t
Transistors having controlled conductive spacers, uses of...
Transistors having dynamically adjustable characteristics
Transistors having implanted channel layers and methods of...
Transistors having independently adjustable parameters
Transistors having reinforcement layer patterns and methods...
Transistors including supported gate electrodes
Transistors incorporating substrates comprising liquid crystal p
Transistors of semiconductor devices and methods of...
Transistors using crystalline silicon devices on glass
Transistors with emitters having at least three sides
Transistors with increased mobility in the channel zone and...
Transistors with laterally extended active regions and...
Transistors with multilayered dielectric films
Transistors with multiple emitters, and transistors with substan
Transistors with stressed channels
Transistors, semiconductor devices, assemblies and...