Transistors with multiple emitters, and transistors with substan

Details Transistors with multiple emitters, and transistors with substan Transistors with multiple emitters, and transistors with substan

1994-09-30

1996-04-16

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Plural non-isolated transistor structures in same structure

257579, 257586, 257587, 257563, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

055085520

ABSTRACT:
A bipolar transistor is provided in which the base-emitter junctions do not traverse the base but terminate inside the top surface of the base. The transistor has long emitter perimeter available for current flow and more than two emitter sides (e.g., three sides) available for current flow, which allows obtaining a low base resistance, a low emitter resistance, a low collector resistance, a low base-collector capacitance, and a small size.

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