Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2005-10-18
2005-10-18
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S280000, C257S284000
Reexamination Certificate
active
06956239
ABSTRACT:
The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a source, a drain and a gate. The gate is disposed between the source and the drain and on an n-type conductivity channel layer. A p-type conductivity region is provided beneath the source and has an end that extends towards the drain. The p-type conductivity region is spaced apart from the n-type conductivity channel region and is electrically coupled to the source.
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Cree Inc.
Eckert George
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