Transistors having implanted channel layers and methods of...

Details Transistors having implanted channel layers and methods of... Transistors having implanted channel layers and methods of...

2007-04-16

2011-11-01

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S332000, C428S172000

Reexamination Certificate

active

08049272

ABSTRACT:
A MESFET includes a silicon carbide layer, spaced apart source and drain regions in the silicon carbide layer, a channel region positioned within the silicon carbide layer between the source and drain regions and doped with implanted dopants, and a gate contact on the silicon carbide layer. Methods of forming a MESFET include providing a layer of silicon carbide, forming spaced apart source and drain regions in the silicon carbide layer, implanting impurity atoms to form a channel region between the source and drain regions, annealing the implanted impurity atoms, and forming a gate contact on the silicon carbide layer.

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