Transistors including supported gate electrodes

Details Transistors including supported gate electrodes Transistors including supported gate electrodes

2011-06-14

2011-06-14

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S194000, C257S284000, C257SE29246

Reexamination Certificate

active

07960756

ABSTRACT:
A transistor includes a protective layer having an opening extending therethrough on a substrate, and a gate electrode in the opening. First portions of the gate electrode laterally extend on surface portions of the protective layer outside the opening on opposite sides thereof, and second portions of the gate electrode are spaced apart from the protective layer and laterally extend beyond the first portions. Related devices are also discussed.

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