Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With multiple separately connected emitter – collector – or...
Patent
1992-12-14
1995-02-07
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With multiple separately connected emitter, collector, or...
257554, 257559, 257560, 257572, 257573, 257577, 257579, 257580, 257588, 327565, 327577, H01L 2972, H01L 2712
Patent
active
053878132
ABSTRACT:
A bipolar transistor is provided in which the base-emitter junctions do not traverse the base but terminate inside the top surface of the base. The transistor has long emitter perimeter available for current flow and more than two emitter sides (e.g., three sides) available for current flow, which allows obtaining a low base resistance, a low emitter resistance, a low collector resistance, a low base-collector capacitance, and a small size.
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Bien David E.
Grubisich Michael J.
Iranmanesh Ali A.
National Semiconductor Corporation
Nelson H. Donald
Ngo Ngan V.
Roddy Richard J.
Shenker Michael
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