Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2004-11-23
2008-11-25
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S219000, C257S234000, C438S157000, C438S172000
Reexamination Certificate
active
07456443
ABSTRACT:
High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include a cap layer having a doped region adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. Graphitic BN passivation structures for wide bandgap semiconductor devices are provided. SiC passivation structures for Group III-nitride semiconductor devices are provided. Oxygen anneals of passivation structures are also provided. Ohmic contacts without a recess are also provided.
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Saxler Adam William
Sheppard Scott
Smith Richard Peter
Cree Inc.
Myers Bigel & Sibley & Sajovec
Rao Steven H
Weiss Howard
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